Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithicallyintegrated photodiodes by selective-area MOCVD |
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| Authors: | Lammert RM Mena PV Forbes DV Osowski ML Kang SM Coleman JJ |
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| Institution: | Microelectron. Lab., Illinois Univ., Urbana, IL ; |
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| Abstract: | Fabrication, design, and operation of strained layer, InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes fabricated by selective-area epitaxy are presented. Threshold currents as low as 8 mA (~300 A/cm2) were obtained for uncoated devices operating cw at room temperature. A responsivity of 71 μA/mW was obtained for a device with a photodiode etched facet angle of 3° and a photodiode bias of 0 V |
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