Messung der lichtelektrischen Leitung in Anthrazenkristallen

The drift mobility of holes in pure Anthracene has been measured by the transient photoconductivity technique used byKepler andLeblanc. The mobility is 0.8 cm²/Vsec and varies asT ^?2. In Tetracene-doped crystals the drift-mobility of holes decreases with growing Tetracene concentration and it varies exponentially as-T ^?1, which suggests that Tetracene acts as a trap. The trap depth is 0.45 eV. By pre-irradiation with α-particles or X-rays the photocurrent is reduced and it is supposed that α-irradiation produces deep traps, whereas X-rays produce as well shallow as deep traps.