Photoluminescence of Ge(Si)/Si(0 0 1) self-assembled islands in the near infra-red wavelength range |
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Authors: | A. V. Novikov D. N. Lobanov A. N. Yablonsky Yu. N. Drozdov N. V. Vostokov Z. F. Krasilnik |
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Affiliation: | Institute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod 603950, Russia |
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Abstract: | The dependence of photoluminescence spectra of structures with GeSi/Si(0 0 1) self-assembled nanoislands on growth temperature has been investigated. It was shown that the redshift of the island-related photoluminescence peak with a decrease of the growth temperature is associated with suppression of Si diffusion in the islands and an increase of Ge content in them. For the first time a photoluminescence signal from SiGe islands was observed at energies much lower than the Ge band gap. The energy position of the island-related photoluminescence peak is well described by the model of optical transition, which is indirect in real space. The photoluminescence signal at 1.55 μm from GeSi/Si(0 0 1) self-assembled islands was obtained up to room temperature. |
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Keywords: | Silicon Self-assembled islands Strain-driven alloying Photoluminescence |
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