| 双平面掺杂和单平面掺杂PHEMT器件的性能比较 |
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| 引用本文： | 陈震,郑英奎,刘新宇,和致经,吴德馨.双平面掺杂和单平面掺杂PHEMT器件的性能比较[J].半导体学报,2004,25(3):247-251. |
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| 作者姓名： | 陈震 郑英奎 刘新宇 和致经 吴德馨 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 研制了Al0 .2 4 Ga0 .76 As/ In0 .2 2 Ga0 .78As单平面掺杂PHEMT器件(SH - PHEMT)和双平面掺杂PHEMT器件(DH- PHEMT) ,并对其特性进行了比较.由于采用了双异质结、双平面掺杂的设计,DH- PHEMT能将载流子更好地限制在沟道中,得到更大的二维电子气浓度和更均匀的二维电子气分布,这些都有利于提高器件的性能.因此,DH- PHEMT器件具有更好的线性度,在较大的栅压范围内具有高的跨导和更大的电流驱动能力.这说明DH-PHEMT器件更加适用于高线性度应用的微波功率器件.
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| 关 键 词： | 赝配高电子迁移率晶体管(PHEMT) 平面掺杂 线性度 |
Device Characteristics Comparison Between GaAs Single and Double Delta-Doped Pseudomorphic High Electron Mobility Transistors |
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| Chen Zhen,Zheng Yingkui,Liu Xinyu,He Zhijing,Wu Dexin.Device Characteristics Comparison Between GaAs Single and Double Delta-Doped Pseudomorphic High Electron Mobility Transistors[J].Chinese Journal of Semiconductors,2004,25(3):247-251. |
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| Authors: | Chen Zhen Zheng Yingkui Liu Xinyu He Zhijing Wu Dexin |
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| Abstract: | The Al 0.24Ga 0.76As/In 0.22Ga 0.78As single delta-doped PHEMT (SH-PHEMT) and double delta-doped PHEMT (DH-PHEMT) are fabricated and investigated.Based on the employment of double heterojunction,double delta doped design,the DH-PHEMT can enhance the carrier confinement,increase the electron gas density,and improve the electron gas distribution,which is beneficial to the device performance.A high device linearity,high transconductance over a large gate voltage swing,high current drivability are found in DH-PHEMT.These improvements suggest that DH-PHEMT is more suitable for high linearity applications in microwave power device. |
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| Keywords: | pseudomorphic high electron mobility transistor(PHEMT) delta dope linearity |
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