Contributions to the surface preparation of semiconductor materials of low hardness

Starting from the general demands made upon semiconductor surfaces (measuring samples, substrates) and the critical material properties, the boundary conditions for the surface preparation of substances of low hardness are stated and technological variants for Bi_1−xSb_x, Pb_1−xSn_xTe, and PbS_1−xSe_x are presented. The results show that almost defectfree surfaces of a high quality can be produced in a repeatable way. The depths of significant and detectable damages are determined depending on the technique in question.