Measurements of Hk and Ms in thin magnetic films by the angular dependence of the planar Hall effect |
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| Institution: | 1. School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, China;2. Institute of Microsystems and Nanoelectronics (Dimes), Delft University of Technology, Delft, The Netherlands;3. College of Optoelectronic Engineering, Chongqing University, Chongqing, China |
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| Abstract: | It is shown that the angular dependences of the planar Hall effect measured with infinite magnetic field and with magnetic field H?Hk have an intersection point and this fact is enough for measuring the anisotropy field Hk applying the method presented by Pastor, Ferreiro and Torres in J. Magn. Magn. Mat. 53 (1986) 349, 62 (1986) 101. The scaling of the Hall tension U proportional to M2s in mV/Am-1 gives a possibility for calculating the Ms-values of the films. These assumptions are verified for NiFe- and NiFeGe films with a uniaxial magnetic anisotropy. |
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