The influence of ambient gas atmosphere on the liquid and solid composition at liquid phase epitaxial growth of GaAs–Alx-Ga1−xAs layers

Epitaxial gallium arsenide and gallium aluminium arsenide layers were grown from gallium solution on chromium-doped semi-insulating gallium arsenide. The effect of residual water concentration in the ambient gas atmosphere on change of aluminium in Al_xGa_1−xAs was determined. It was shown that a water concentration less than 5 ppm is necessary to grow epitaxial layers with high reproducible XAlAs-content and low carrier concentration.