High field magnetisation and hall effect of U3Sb4 single crystals |
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| Institution: | 1. Graduate School of Science and Engineering, Iwate University, Morioka, Iwate 020-8551, Japan;2. Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan;1. Universität Würzburg, Experimentelle Physik VII, 97074 Würzburg, Germany;2. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea;1. Department of Pure and Applied Physics, Kansai University, Suita, 564-8680, Japan;2. Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573;3. Graduate School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan |
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| Abstract: | We have examined the Hall effect of U3Sb4 (Tc = 146 K) in the paramagnetic and ferromagnetic ranges as well as the magnetisation along three principal directions at 4.2 K and in fields up to 35 T. Both ordinary and extraordinary Hall constants are positive, giving the hole concentration of 1.2 × 1020 cm−3. The easy magnetic axis was found to be 〈100〉, and the uranium moment was determined to be 2μB. Magnetisation jumps at 4.9 and 17.6 T in fields along the 〈111〈 and 〈110〉 direction, respectively, were also found. A microscopic spin model including crystal-field and anisotropic-exchange interactions predicts magnetisation behaviour in qualitative agreement with that observed experimentally for U3X4 (X = P, As, Sb) compounds, and it shows that the observed jumps are spin-orientational transitions. |
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