Climb mechanisms and critical temperature in off-stoichiometric V3Si

A dislocation climb model is proposed for both vanadium and silicon rich V₃Si single crystals. Just the type of constitutional point defects is needed solely which dominates in the sample under consideration. The climb mechanism involves a conversion of one defect type into another and so may be responsible for the changes in critical temperature of the superconductor as observed after plastic deformation at elevated temperatures.