| Abstract: | (010) cleavages of magnesium orthosilicate crystals have been etched in concentrated hydrochloric acid vapour at room temperature, in the melts of potassium and sodium hydroxides at 400°C, and also in the aqueous solutions of KOH, NaOH, and their mixtures at boiling points. The configuration of isolated dislocations have been described. Bent, branched, stepped and the inclined nature of dislocation lines have been investigated. The effect of dissolution ledges on the size and morphology of etch pits has been discussed. The implications are discussed. |
