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On the redistribution of dislocations in silicon single crystals in the vicinity of stress concentrators
Authors:A. M. Orlov  A. A. Solov’ev  I. O. Yavtushenko  A. A. Skvortsov
Affiliation:(1) Ul’yanovsk State University, ul. L’va Tolstogo 42, Ul’yanovsk, 432970, Russia
Abstract:The mechanism of relaxation of stresses through the multiplication and motion of dislocations in the vicinity of a stress concentrator (scribe) in silicon single crystals is investigated. The energy-related and dynamic characteristics of the observed processes are determined for different angles of orientation of stress concentrators with respect to the [110] direction.
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