| CMOS器件中电荷泵过程的图解表示 |
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| 引用本文： | 黄新运,焦广泛,沈忱,曹伟,黄大鸣,李名复.CMOS器件中电荷泵过程的图解表示[J].半导体学报,2010,31(8):084003-7. |
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| 作者姓名： | 黄新运 焦广泛 沈忱 曹伟 黄大鸣 李名复 |
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| 基金项目： | Project supported by the Micro/Nano-Electronics Science and Technology Innovation Platform of Fudan University National Natural Science Foundation of China（No.60936005）; the National VLSI Project（No.2009ZX02035-003）. |
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| 摘 要： | 我们提出了一种以图解的方式来理解复杂的电荷泵浦 ( CP ) 测量过程的方法。这里我们定义了电荷泵浦测量中的快速和慢速两种缺陷陷阱，并用图解的方式清晰直观地解释了电荷泵浦测量中出现的脉冲上升下降时间相关现象、频率相关现象、快速和慢速成分与测量电压相关现象以及几何效应对电荷泵浦测量的影响。由于电子和空穴的捕获截面不对称，并且测量到的电荷泵浦电流 ( Icp ) 是由捕获截面较小的电子或者空穴成分决定，所以慢速陷阱的电荷泵测量中含有动态和稳态两个过程。我们还用这个图解的方法讨论了最新发展的改良电荷泵浦 ( MPC ) 方法的合理性。
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| 关 键 词： | CMOS晶体管 图表示 抽水 时间依赖性 电压依赖性 cp脉冲 不对称性 CP |
| 收稿时间： | 1/7/2010 12:00:00 AM |
| 修稿时间： | 3/31/2010 8:05:36 PM |
Diagram representations of charge pumping processes in CMOS transistors |
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| Huang Xinyun,Jiao Guangfan,Shen Chen,Cao Wei,Huang Daming and Li Mingfu.Diagram representations of charge pumping processes in CMOS transistors[J].Chinese Journal of Semiconductors,2010,31(8):084003-7. |
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| Authors: | Huang Xinyun Jiao Guangfan Shen Chen Cao Wei Huang Daming and Li Mingfu |
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| Institution: | State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China;State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China;SNDL, ECE Department, National University of Singapore, Singapore 117576, Singapore;State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China;State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China;State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China; SNDL, ECE Department, National University of Singapore, Singapore 117576, Singapore |
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| Abstract: | A diagram representation method is proposed to interpret the complicated charge pumping (CP) processes. The fast and slow traps in CP measurement are defined. Some phenomena such as CP pulse rise/fall time dependence, frequency dependence, the voltage dependence for the fast and slow traps, and the geometric CP component are clearly illustrated at a glance by the diagram representation. For the slow trap CP measurement, there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture, and the CP current is determined by the lower capturing electron or hole component. The method is used to discuss the legitimacy of the newly developed modified charge pumping method. oindent |
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| Keywords: | charge pumping interface-trap generation bias temperature instability modified CP oxide charge oindent |
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