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Modification of Hexatriacontane by O2–N2 Microwave Post-Discharges |
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| Authors: | V Hody T Belmonte C D Pintassilgo F Poncin-Epaillard T Czerwiec G Henrion Y Segui J Loureiro |
| Institution: | (1) Laboratoire de Science et Génie des Surfaces (UMR 7570), Parc de Saurupt, 54042 Nancy Cedex, France;(2) Dep. Física, Faculdade de Engenharia, Univ. Porto, 4200-465 Porto, Portugal;(3) Centro de Física dos Plasmas, Instituto Superior Técnico, 1049-001 Lisboa, Portugal;(4) Laboratoire Polymères Colloïdes et Interfaces (UMR 6120), Université du Maine, Avenue O. Messiaen, 72000 Le Mans, France;(5) Laboratoire de Génie Electrique de Toulouse, Université Paul Sabatier, Bât 3R3, 118 Route de Narbonne, 31062 Toulouse cedex 04, France |
| Abstract: | Etch rates of hexatriacontane (HTC) as high as ~10 mg s−1 m−2 in late O2 post-discharge are obtained at 333 K where no significant UV nor VUV irradiation occurs. Introducing N2 in the gas mixture helps control the ratio of O/O2 densities, which is shown to play a key role in the functionalization or etching of the HTC. The oxygen atoms are required for any further modification of the HTC because they initiate the formation of the radical chains by abstraction of one hydrogen. O(3P) atoms do not contribute directly to break the alkane chain close to room temperature but they can functionalise it. O2 is the important reactive species for the etching because of the role played by the peroxide groups on the scission of the hydrocarbon chains. |
| Keywords: | Cleaning Post-discharge Hexatriacontane |
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