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AlGaN-based UV photodetectors |
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| Authors: | E. Monroy F. Calle J. L. Pau E. Mu oz F. Omn s B. Beaumont P. Gibart |
| Affiliation: | a Dpto. de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain b CRHEA-CNRS, Parc Sophia Antipolis, 06560 Valbonne, France |
| Abstract: | AlxGa1−xN alloys are very attractive materials for application to ultraviolet photodetection. AlGaN photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes, p–n junction photodetectors and phototransistors have been recently developed. In this work we analyse the performance of AlGaN-based photodetectors, discussing present achievements, and comparing the characteristics of the various photodetector structures developed to date. |
| Keywords: | B1. Nitrides B2. Semiconducting III–V materials B3. Detectors |
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