Elasto-thermodiffusive (ETNP) surface waves in semiconductor materials

The present article is devoted to investigate the propagation of elasto-thermodiffusive (ETNP) surface waves in a homogeneous isotropic, thermally conducting semiconductor material of half-space with relaxation of heat and charge carrier fields. The secular equation, a more general functional relation, that governs the propagation of elasto-thermodiffusive (ETNP) surface waves in homogeneous isotropic, thermoelastic semiconductor material halfspace with relaxation of heat and charge carrier fields has been derived by solving a system of coupled partial differential equations. A hybrid numerical technique consisting of Descartes algorithm for solving complex polynomial characteristic equation along with functional iteration scheme has been successfully used to solve the secular equation in order to obtain dispersion curves, attenuation coefficient and specific loss factor of energy dissipation for p-type germanium (Ge) semiconductor. Some particular forms of the general secular equation governing the propagation of elasto-thermodiffusive (ETN/ETP), thermoelastic (ET), elastodiffusive (EP/EN) and thermodiffusive (TP/TN) surface waves have been also deduced and discussed. In order to illustrate the analytical development, the numerical solution of the secular equation and other relevant relations under different situations is also carried out for Ge semiconductor materials to characterize the elasto-thermodiffusive (ETP) and thermodiffusive (TP) surface waves. The computer simulated results have been presented graphically in respect of the dispersion curves, attenuation coefficient and specific loss factor.