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Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures |
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| Authors: | Saidov A S Razzokov A Sh |
| Institution: | 1.Physical-Technical Insitute, SPA “Physics-Sun,” Uzbekistan Academy of Sciences, Tashkent, Uzbekistan ;2.Urgench State University, Urgench, Uzbekistan ; |
| Abstract: | Crystallography Reports - Single-crystal films of Si1 – xGex (0 < x < 1) solid solution have been grown on Si substrates by liquid-phase epitaxy, and a... |
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