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Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates |
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| Authors: | Myasoedov A. V. Bert N. A. Bessolov V. N. |
| Affiliation: | 1.Ioffe Institute, 194021, St. Petersburg, Russia ; |
| Abstract: | Crystallography Reports - The microstructure of gallium nitride epitaxial layers synthesized by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapour deposition (MOCVD) on... |
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