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Electron Microscopy Study of Surface Islands in Epitaxial Ge3Sb2Te6 Layer Grown on a Silicon Substrate |
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| Authors: | Zaytseva Yu. S. Borgardt N. I. Prikhodko A. S. Zallo E. Calarko R. |
| Affiliation: | 1.National Research University of Electronic Technology MIET, 124498, Zelenograd, Moscow, Russia ;2.Paul Drude Institut für Festk?rperelektronik, 10117, Berlin, Germany ;3.Walter Schottky Institut, Physik Department, Technische Universit?t München, 85748, Garching, Germany ; |
| Abstract: | Crystallography Reports - Islands in the form of truncated triangular pyramids on the surface of an epitaxial Ge3Sb2Te6 layer grown on a Si(111) substrate are identified by scanning electron... |
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