Research status in thin-film crystalline Si solar cells |
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| Authors: | Takashi Fuyuki |
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| Affiliation: | 1. Chengdu Green Energy and Green Manufacturing Technology R&D Center, Chengdu Science and Technology Development Center of CAEP, Chengdu, Sichuan 610207, China;2. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China;3. Beijing Computational Science Research Center, Beijing 100084, China;1. School of Chemical Engineering & Materials Science, Chung-Ang University (CAU), 84, Heukseok-ro, Dongjakgu, Seoul 06974, Republic of Korea;2. Graduate Institute of Ferrous & Energy Materials Technology (GIFT), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea |
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| Abstract: | Recent research status and future subjects for the development of thin-film crystalline Si solar cells were reviewed. Optimum design of cell configuration and polycrystalline silicon growth by atmospheric pressure chemical vapor deposition (APCVD) were demonstrated. In order to configure high efficiency thin-film poly-Si solar cells, a novel method of quasi-three-dimensional simulation using a cylindrical coordinate system was carried out. Interface recombination velocity at grain boundaries should be less than 103 cm/s based on the simulation results. Even at a relatively short diffusion length of Ln=50 μm, high efficiency larger than 16% will be expected at a thickness of 5–20 μm. Poly-Si films with columnar structures whose diameter was around 5 μm were successfully deposited on foreign substrates with APCVD at a high growth rate of 0.8 μm/min. Up-to-date status of reported cell performances were discussed in addition to future prospects. |
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| Keywords: | Si solar cells Crystalline thin-film Chemical vapor deposition |
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