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射频电感性耦合等离子体调谐基片自偏压特性
引用本文:丁振峰,霍伟刚,王友年.射频电感性耦合等离子体调谐基片自偏压特性[J].核聚变与等离子体物理,2004,24(3):197-202.
作者姓名:丁振峰  霍伟刚  王友年
作者单位:大连理工大学三束材料改性国家重点实验室,大连,116023;大连理工大学三束材料改性国家重点实验室,大连,116023;大连理工大学三束材料改性国家重点实验室,大连,116023
基金项目:国家自然科学基金资助项目(10175014)
摘    要:采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法,控制基片电极的射频自偏压。研究了调谐基片自偏压随外部调谐电容值的变化特征,得到了调谐基片射频自偏压随射频放电功率、气压的变化曲线。在一定放电参数区域内,调谐基片射频自偏压随调谐电容的变化曲线呈现跳变、双稳、迟滞现象。

关 键 词:感应耦合等离子体  电容性耦合  射频自偏压  鞘层  非线性
文章编号:0254-6086(2004)03-0197-06

Characteristics of the tuned substrate self-bias in an RF inductively coupled plasma
DING Zhen-feng,HUO Wei-gang,WANG You-nianodification by Beams,Dalian University of Technology,Dalian.Characteristics of the tuned substrate self-bias in an RF inductively coupled plasma[J].Nuclear Fusion and Plasma Physics,2004,24(3):197-202.
Authors:DING Zhen-feng  HUO Wei-gang  WANG You-nianodification by Beams  Dalian University of Technology  Dalian
Institution:DING Zhen-feng,HUO Wei-gang,WANG You-nianodification by Beams,Dalian University of Technology,Dalian 116023)
Abstract:The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.Experimental studies have been made on the characteristics of the tuned substrate self-bias by tuning the external capacitor,and relations of the tuned substrate self-bias with the RF discharge power and the argon gas pressure.In a certain domain of discharge parameters,transitions and hysteresises have been observed in the curves of the tuned substrate self-bias versus the capacitance of the tuning capacitor.
Keywords:Inductively coupled plasma  Capacitive coupling  RF self-bias  Sheath  Non-linearity
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