Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures |
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| Authors: | D. L. Alfimova L. S. Lunin M. L. Lunina A. S. Pashchenko S. N. Chebotarev A. E. Kazakova D. A. Arustamyan |
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| Affiliation: | 1.Southern Scientific Center,Russian Academy of Sciences,Rostov-on-Don,Russia;2.Platov South-Russian State Polytechnic University (NPI),Novocherkassk,Russia |
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| Abstract: | The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/GaAs heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate. |
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