Change of light reflection from the surface of 6H-SiC single crystals under ultraviolet radiation (photonic transistor)

The excitation spectra of specular photoreflection of a helium-neon laser radiation from the surface of 6H-SiC single crystals at the Brewster angle with the polarization parallel to the plane of incidence have been investigated. The obtained results on the change in the intensity of the reflected light indicate a decrease in the optical refractive index of silicon carbide under ultraviolet radiation. It has been found that there is a correlation of the photoreflection excitation spectra with the photoconductivity spectra of the material at low intensities of the reflected light and ultraviolet radiation. It has been revealed that an increase in the intensity of ultraviolet optical pumping leads to a linear increase in the photomodulation of the reflected red light with a maximum at 632.8 nm.