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Advanced ion beam technology for versatile oxide thin film formation
Institution:1. Research and Development Center, P&I Corporation Ltd., Shinnae Technotown #405, 485 Sangbong-Dong, Jungrang-Gu, Seoul 131-221, Republic of Korea;2. Chungju National University, School of Liberal Arts, 123 Geomdan-ri, Iryu-myeon, Chungju, Chungbuk 380-702, Republic of Korea
Abstract:Various oxide films, such as SnO2, In2O3, Al2O3, SiO2, ZnO, and Sn-doped In2O3 (ITO) have been deposited on glass and polymer substrates by advanced ion beam technologies including ion-assisted deposition (IAD), hybrid ion beam, ion beam sputter deposition (IBSD), and ion-assisted reaction (IAR). Physical and chemical properties of the oxide films and adhesion between films and substrates were improved significantly by these technologies. By using the IAD method, non-stoichiometry, crystallinity, and microstructure of the films were controlled by changing assisted oxygen ion energy and arrival ratio of assisted oxygen ion to evaporated atoms. IBSD method has been carried out for understanding the growth mode of the films on glass and polymer substrate. Relationships between microstructure and electrical properties in ITO films on polymer and glass substrates were intensively investigated by changing ion energy, reactive gas environment, substrate temperature, etc. Smooth-surface ITO films (Rrms ? 1 nm and Rp?v ? 10 nm) for organic light-emitting diodes were developed with a combination of deposition conditions with controlling microstructure of a seed layer on glass. IAR surface treatment enormously enhanced the adhesion of oxide films to polymer substrate. In the case of Al2O3 and SiO2 films, the oxygen and moisture barrier properties were also improved by IAR surface treatment. The experimental results of the oxide films prepared by the ion beam technologies and its applications will be represented in detail.
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