Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry–Perot laser diode |
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| Institution: | 1. Telecommunications Research Lab, LG Cable Ltd., Seoul 431-080, Republic of Korea;2. Department of Electrical and Computer Engineering, Johns Hopkins University, MD 21218, United States;3. Optical Communications Research Center, Electronics and Telecommunications Research Institute, 500-480, Republic of Korea |
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| Abstract: | We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry–Perot laser diode. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. Furthermore, overheating of semiconductor laser originated from thermal resistance is analyzed and evaluated by measuring junction temperature. Results from experiment and estimation are compared at extreme operating conditions in which show agreement within 1 °C. |
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