Phase change behaviors of In-Ge-Sb-Te alloy

Phase change behaviors of In₂Ge₈Sb₈₅Te₅ material were studied. Thermal analysis shows the phase change occurs around 160 °C and melting at 572 °C. Isothermal reflectivity-time measurement of In₂Ge₈Sb₈₅Te₅ shows a growth-dominated crystallization mechanism. A high crystallization speed of 30 ns is realized upon irradiation by blue laser beam of 405 nm. It has face-centered-cubic NaCl-type and rhombohedral Sb crystal structures. The weaker binding energy of In and In-Sb bond energy are believed to be the reasons for fast crystallization speed of In₂Ge₈Sb₈₅Te₅. PACS 61.05.cp; 68.55.Nq; 68.60.Dv; 78.66.Jg; 78.20.-e