1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser |
| |
| Authors: | Okhotnikov O G Jouhti T Konttinen J Karirinne S Pessa M |
| |
| Institution: | Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101, Tampere, Finland. oleg.okhotnikov@orc.tut.it |
| |
| Abstract: | We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range. |
| |
| Keywords: | |
| 本文献已被 PubMed 等数据库收录！ |
|
