On the theory of amplification of meso-ultrasound in anisotropic monopolar semiconductors

The electronic absorption coefficient (_e) of meso-ultrasound (_p ^–1 _en, _t, _ee; ql 1, where _p, _en, _t are the times of pulse relaxation, energy, and current carrier traps; _ee ^–1 is the frequency of intraelectron collisions; , q are the frequency and wave vector of sound; l is the carrier mean free path) in the presence of a permanent external field E₀ e ₀ ^–1 q₀T is calculated for anisotropic single-valley semiconductors with piezoelectrical and potential-deformation acoustoelectronic interaction. Considered arbitrary are: 1) the anisotropy of the tensors * and _p (and other crystal parameters); 2) the degree of Fermi degeneration of the carriers; 3) the dependence of _p on the carrier energy . The acoustoheat nonlinearity is neglected. The possibility of meso-ultrasound amplification by the transverse field (E₀ - q) is predicted. By changing the orientation of the vector q relative to the crystal axes, the transverse threshold field (E ^thr ) can be controlled smoothly and within broad limits, This permits the production of a mechanical sound-amplification regulator or a modulator of its intensity. The ratio between E ^thr and E ^thr yields a measure of the relative anisotropy of the mobility.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 87–92, February, 1977.