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Er-doped hydrogenated amorphous silicon: structural and optical properties
Authors:Mun-Jun Kim
Institution:Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusung-dong, Yusung-gu, 35-701 Taejon, South Korea
Abstract:The effect of erbium-doping on the structural and optical properties of hydrogenated amorphous silicon (a-Si:H) is investigated. Optical absorption and Raman spectra indicate that erbium doping introduces defect states, and that above a concentration of 0.27 at.%, induces strong structural disorder. The photoluminescence measurements show that erbium doping introduces non-radiative decay paths for carriers in a-Si:H, leading to decrease in both the Er3+ and intrinsic a-Si:H luminescence intensity when the Er concentration is increased to more than 0.04 at.%. The results are compared to that of Er-doped crystalline Si, and the possible excitation mechanisms of Er in a-Si:H are discussed.
Keywords:R110  S180  R120
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