首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Geometry of the transition state of radical abstraction reactions involving Si-H, Ge-H, and Sn-H Bonds
Authors:T I Drozdova  E T Denisov  A F Shestakov  N S Emels’yanova
Institution:(1) Institute of Chemical Physics in Chernogolovka, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
Abstract:Transition-state interatomic distances in the reactions C˙H3+SiH4, Si˙H3+SiH4, C˙H3+GeH4, and C˙H3+SnH4 are calculated by the B3LYP density functional and intersecting parabolas methods. A semiempirical algorithm is developed for the calculation of the Y...H and C...H distances in the transition state of the radical abstraction reactions R˙+YH involving silanes, germanes, and stannanes and the reverse reactions of silyl, germanyl, and stannyl radicals with hydrocarbons. This algorithm is used to calculate interatomic distances in these reactions. An analysis of the calculated data shows that the Y...H and C...H distances in these reactions depend on the following factors: the enthalpy of reaction, the radius of the Y atom (Y = C, Si, Ge, Sn), and four-electron repulsion during the attack of a radical on the C-H bond adjacent to the double bond. Empirical equations relating the interatomic distances to the enthalpy of reaction and to the Y-R bond length are set up.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号