(1) Department of Nano and Microelectronics Engineering, Shahid Beheshti University, Evin, 1983963113, Tehran, Iran
Abstract:
We investigate the band-gap renormalization due to electron-electron interaction in the n-type doped GaAs-baseddouble-quantum-wire systems. Electron self-energy is calculated using the leading-order perturbation theory(GW) within the full random-phase-approximation (RPA). We include the impurity effects through Merminexpression and show that decreasing the spacing in double-wire system can compensate partly the undesirableeffect of impurities on the band-gap renormalization. Therefore, it is possible to offset the effect ofimpurity in related devices and to adjust the band-gap. We also, apply a constant electric field to one of thewires. It is shown that the change of the band-gap renormalization in the other wire will be insignificant ifthe drift velocity does not exceed Fermi velocity.
