Photoassisted growth and nitrogen doping of ZnSe

ZnSe was grown on GaAs(100) substrates by photoassisted MOVPE using the precursors dimethylzinc-triethylamine (DMZn-TEN) and ditertiarybutylselenide (DtBSe). The optimal growth temperature was T_g = 300°C. Above 300°C no enhancement of growth rate was observed under illumination. Furthermore, nitrogen doping experiments were performed using phenylhydrazine, allylamine and tert-butylamine as nitrogen precursors. Nitrogen concentrations up to 10¹⁹ cm⁻³ (SIMS) were achieved with input flow ratios as low as PhHz]/Se] = 4 × 10⁻⁴. All as-grown samples were highly compensated. Successful nitrogen incorporation was also observed with allylamine. However, the use of tert-butylamine together with the adduct compound DMZn-TEN showed no incorporation of nitrogen.