|
|||||
|
|
Effects of annealing on structural,optical and electrical properties of Al-doped ZnO thin films |
|
| Authors: | Chen?Yanwei,Yu?Wenhua,Liu?Yichun? author-information" > author-information__contact u-icon-before" > mailto:ycliu@nenu.edu.cn" title=" ycliu@nenu.edu.cn" itemprop=" email" data-track=" click" data-track-action=" Email author" data-track-label=" " >Email author |
| Affiliation: | 1. Centre for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024, China;Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changc 2. Centre for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024, China |
| Abstract: | In this paper, the structural, electrical and optical properties of Al-doped zinc oxide (ZnO: Al) thin films onto quartz substrates prepared by electron beam evaporation technique were studied. All samples are polycrystal with a hexagonal structure and c-axis preferred orientation. The intense UV emissions and weak deep-level green emissions were observed. The films show high transparency, conductivity and high carrier concentration. Van der Pauw measurements show that the films are n-type degenerate semiconductor. The lowest resistivity is 6.710-4 Ocm at room temperature. These films exhibit a carrier density above 1020 cm-3. The conduction mechanism was discussed. The behavior of metallic conduction can be observed in the high temperature range. |
| Keywords: | ZnO: Al thin film photoluminescence electrical properties structural properties Van der Pauw measurement. |
| 本文献已被 CNKI 万方数据 SpringerLink 等数据库收录！ | |