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基于丢失手缺陷的IC互连线失效评估新模型
引用本文:赵天绪,段旭朝,姜晓鸿. 基于丢失手缺陷的IC互连线失效评估新模型[J]. 宝鸡文理学院学报(自然科学版), 2002, 22(1): 33-35,62. DOI: 10.3969/j.issn.1007-1261.2002.01.004
作者姓名:赵天绪  段旭朝  姜晓鸿
作者单位:1. 宝鸡文理学院,数学系,陕西,宝鸡,721007;2. 宝鸡文理学院,物理系,陕西,宝鸡,721007;3. 西安电子科技大学,应用数学系,陕西,西安,710071
摘    要:在分析现有的集成路互连线失效评估模型的基础上,提出了一种考虑丢失物缺陷影响的IC互连接线电迁移损失新模型.在IC电路设计中,这种新模型可用于估计与丢失物缺陷及其它因素有关的IC互连线电迁移损失.

关 键 词:丢失物缺陷  电迁移  失效估模型
文章编号:1007-1261(2002)01-0033-03

A new estimation model of IC intreconnect failure based on IC missing material defect
ZHAO Tian-xu ,DUAN Xu-chao ,JIANG Xiao-hong. A new estimation model of IC intreconnect failure based on IC missing material defect[J]. Journal of Baoji College of Arts and Science(Natural Science Edition), 2002, 22(1): 33-35,62. DOI: 10.3969/j.issn.1007-1261.2002.01.004
Authors:ZHAO Tian-xu   DUAN Xu-chao   JIANG Xiao-hong
Affiliation:ZHAO Tian-xu 1,DUAN Xu-chao 2,JIANG Xiao-hong 3
Abstract:The available estmation model of IC interconnect failure is analyzed,and a new electromigration model of IC interconnection is proposed to rake in account the electromigration loss related to the IC missing material defect.The new model can be used in adesign to estimate electromigration loss related to the IC missing material defect,among other factors.
Keywords:missing material defect  electromigration  model offailure estimation
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