Valley polarization in Si(100) at zero magnetic field |
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Authors: | Takashina K Ono Y Fujiwara A Takahashi Y Hirayama Y |
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Affiliation: | NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan. |
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Abstract: | The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO(2)/Si(100)/SiO(2) quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field. |
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