Features of the formation of thermal donors in silicon under elastic tensile stress |
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Authors: | I I Novak G A Oganesyan |
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Institution: | (1) Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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Abstract: | The formation process of electrically active oxygen-containing complexes (thermal donors) in silicon is investigated at the initial stage of thermal treatment at T < 500°C under elastic tensile stress σ = 1 GPa. It is shown that, under these conditions, the formation of singly charged donor centers is observed in silicon when the oxygen concentration is (3–5) × 1017 cm?3. When the oxygen concentration is 9 × 1017 cm?3, doubly charged donor centers form. The depth profile of thermal donors is found in the samples studied. |
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