Structural investigation of gallium oxide (β-Ga2O3) nanowires grown by arc-discharge

Gallium oxide nanowires were synthesized by electric arc discharge of GaN powders mixed with a small amount of Ni and Co. The crystal structure of nanowires was determined by multi-channel X-ray diffractometry (MC-XRD), FT-Raman spectroscopy and transmission electron microscopy (TEM). The analyzed results clearly show that the synthesized nanowires are monoclinic gallium oxide (β-Ga₂O₃). Final morphology and microstructure of β-Ga₂O₃ nanowires were changed depending on the presence of the transition metals into the nanowires. The β-Ga₂O₃ nanowires grown by the assistance of transition metals demonstrate a smooth edge surface while containing twin defects at the center. The transition metals have enhanced the step growth of nanowires. However, in the case of the β-Ga₂O₃ nanowires, where the transition metals are not shown on the surface, the nanowires demonstrate rather thin and long shapes with amorphous gallium oxide layers on the nanowire surface.