GaInP/GaAs异质结双极晶体管小信号模型参数提取的新方法

提出了一种直接提取GaInP/GaAs异质结双极晶体管(HBT)小信号模型参数的新方法.该方法基 于HBT器件S参数的测试数据，对HBT的小信号模型进行电路网络分析，利用S，Z，Y参数关系 以及电路“抽出”的技巧，分别对HBT小信号模型的寄生参数和本征元件参数进行提取，建 立了一套完整的直接提取HBT小信号模型参数的新方法.与文献报道HBT小信号模型参数提取 的方法相比，该方法的优点是，提取过程具有简明清晰的物理意义，无需建立特殊的测试结 构，无需引入繁琐的数学优化过程，提取速度快，并且具有比较好的精度和较宽频带范围的 适用性等.关键词：GaInP/GaAs HBT参数提取小信号模型

A novel,yet direct,parameter-extraction method for heterojuction bipolar transis tors small-signal model

An accurate and broad-band method for heterojuction bipolar transistors(HBT) small-signal model parameters is presented in this paper.This method differs from previous ones by extracting the equivalent-circuit parameters without using spec ial test structure or global numerical optimization techniques.The main advantag e of this method is that a unique and physically meaningful set of intrinsic par ameters is extracted from impedance and admittance representation of the measure d S-parameters in the frequency range of 0.5—12GHz under different bias conditi ons.An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistance and parasitic inductance.The method yields a deviation of less then 5% between measured and modeled S-parameters.