立方相β-GaN纳米晶的气相化学反应制备研究

在氮气氛中，以GaP纳米晶为原料，在相对较低的反应温度下，通过N-P取代的气相化学反应 制备立方相β-GaN纳米晶.这是由于GaP纳米晶具有较大的比表面积和表面众多的空位键，使 之具有较高的反应活性造成的.不同升温速率造成不同的化学反应机理，从而生成不同形貌 的β-GaN纳米晶材料. 关键词： 氮化镓 立方相 纳米晶

Synthesis of β-GaN nanocrystals with a cubic structure by gas-phase chemical reaction

β-GaN nanocrystalline have been successfully synthesized from the nitridation of GaP nanocrystalline at low temperatures by gas_phase chemical reaction. The s tarting GaP nanocrystalline has a large specific surface and a high reactivity that can reduce remarkably the difficulty of nitridation. The results of GaP nan ocrystalline in N₂ at different heating rates support the fact that β-GaN nan ocrystalline can form in GaP nanocrystalline via N-P metathesis gas_phase chemic al mechanism. The mechanism is different when different heating rate was used. T his method is very simple and is used generally to synthesize β-GaN nanopartic les or nanorods.