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A radiation-hardened SOI-based FPGA
Authors:Han Xiaowei  Wu Lihua  Zhao Yan  Li Yan  Zhang Qianli  Chen Liang  Zhang Guoquan  Li Jianzhong  Yang Bo  Gao Jiantou  Wang Jian  Li Ming  Liu Guizhai  Zhang Feng  Guo Xufeng  Stanley LChen  Liu Zhongli  Yu Fang  Zhao Kai
Institution:Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:A radiation-hardened SRAM-based field programmable gate array VS 1000 is designed and fabricated with a 0.5 μm partial-depletion silicon-on-insulator logic process at the CETC 58th Institute.The new logic cell (LC),with a multi-mode based on 3-input look-up-table (LUT),increases logic density about 12% compared to a traditional 4-input LUT.The logic block (LB),consisting of 2 LCs,can be used in two functional modes:LUT mode and distributed read access memory mode.The hierarchical routing channel block and switch block can significantly improve the flexibility and routability of the routing resource.The VS1000 uses a CQFP208 package and contains 392 reconfigurable LCs,112 reconfigurable user I/Os and IEEE 1149.1 compatible with boundaryscan logic for testing and programming.The function test results indicate that the hardware and software cooperate successfully and the VS 1000 works correctly.Moreover,the radiation test results indicate that the VS 1000 chip has total dose tolerance of 100 krad(Si),a dose rate survivability of 1.5 × 1011 rad(Si)/s and a neutron fluence immunity of 1 × 1014 n/cm2.
Keywords:radiation-hardened  FPGA  partial-depletion SOI  reconfigurable LC  routing channel block  switch block
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