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Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes |
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| Affiliation: | [1]National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 05005 l, China; [2]School of Physics, Shandong University, Jinan 250100, China |
| Abstract: | Al（Ga）N/GaN, strain, relative permittivity, Schottky metal |
| Keywords: | Al（Ga）N/GaN strain relative permittivity Schottky metal |
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