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Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multinle auantum wells at room temnerature |
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| Authors: | He Chao Liu Zhi Zhang Xu Huang Wen-Qi Xue Chun-Lai and Cheng Bu-Wen |
| Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | Ge, multiple quantum wells, tensile strain, electroluminescence |
| Keywords: | Ge multiple quantum wells tensile strain electroluminescence |
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