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Low-resistance Ohmic contact on polarization-doped AIGaN/GaN heterojunction |
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| Affiliation: | [1]state Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China; [2]Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY40506, USA |
| Abstract: | polarization, A1GaN, carder concentration, Ohmic contact |
| Keywords: | polarization A1GaN carder concentration Ohmic contact |
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