Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN |
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Authors: | E. Meissner S. Schweigard J. Friedrich T. Paskova K. Udwary G. Leibiger F. Habel |
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Affiliation: | 1. Fraunhofer Institute for Integrated Systems and Device Technology, IISB, Department of Crystal Growth, Schottkystrasse, 10, 91058 Erlangen, Germany;2. Kyma Technologies Inc., 8829 Midway West Road, Raleigh, NC 27617, USA;3. Freiberger Compound Materials GmbH, Am St. Niclas-Schacht, 09599 Freiberg, Germany |
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Abstract: | In this study we report the potential and limitations of the cathodoluminescence dark spot (DS) counting as a method for the determination of dislocation density and distribution in GaN, produced by the hydride vapour phase epitaxy (HVPE). Different GaN sample series (s.i. GaN:Fe and n-type GaN:Si) were used, in order to study the dependence of the results of the DS-counting on the dopant type and concentration. By the direct comparison of these results to classical defect selective etching, the DS-measurements were validated. It could be shown that each of the both methods have their particular restrictions, which must be considered in their application. |
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