Mid-infrared emissions from Ho3+ in Ga2S3-GeS2-Sb2S3 glass

Emission properties were investigated in the infrared region for Ga₂S₃-GeS₂-Sb₂S₃ glasses doped with Ho³⁺. We performed Judd–Ofelt analysis and lifetime measurements of the ⁵I₄, ⁵I₅, and ⁵I₆ levels, which are the initial levels of the mid-infrared emissions between 3 to 5 μm of Ho³⁺. The quantum efficiencies reached approximately 18%, 64%, and ～100% for the ⁵I₄, ⁵I₅, and ⁵I₆, respectively. Population analyses were carried out from the relative intensities of the emissions in the near-infrared region. We investigated the dependences on the Ho³⁺ ion concentration of the population ratio of the initial levels to the final levels, initial]/final], of the mid-infrared emissions. The population ratio of ⁵I₅]/⁵I₆] decreased with increase of the Ho³⁺ concentration while those of ⁵I₄]/⁵I₅] and ⁵I₆]/⁵I₇] increased. Particularly, the former, ⁵I₄]/⁵I₅], rapidly increased because of the strong concentration quenching of the ⁵I₅ level through cross relaxation. It was found that the population inversion for the 4.8 μm emission due to the transition, ⁵I₄→⁵I₅, was achieved at high Ho³⁺ concentration in the present experiments.