Effect of defects on strain state in nonpolar a-plane GaN |
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Authors: | Z.Y. Liu S.R. Xu J.C. Zhang J.S. Xue X.Y. Xue M.T. Niu Y. Hao |
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Affiliation: | 1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi''an 710071, China;2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China |
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Abstract: | We have investigated the influence of basal stacking fault (BSF) and impurity related defect on the strain state of a-plane GaN epilayers. Four a-plane GaN epilayers were grown on r-plane sapphire using different growth strategies by metalorganic chemical vapor deposition. It is found that with a growing number of stacking fault, both the anisotropic in-plane strain and compressive out-plane strain along c-axis are relieved. Epitaxial lateral overgrowth with a TiN interlayer is an effective way to relieve in-plane strain and reduce BSF density. The extrapolated lattice parameters free of biaxial strain increase with the normalized yellow luminescence intensity. Hydrostatic strain induced by impurity-related defects is the possible cause of this phenomenon. |
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