Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering

Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photoluminescence (PL) was studied in relation with the temperature, the Er content and the microstructure. Steady-state PL, PL excitation spectroscopy and time-resolved PL were performed. Both visible and near infrared PL were obtained at room temperature for the as-deposited samples. It is demonstrated that the PL intensity reaches a maximum for an Er concentration equal to 1 at% and that the PL efficiency is an increasing function of the magnetron power. Decay time measurements show the important role of defect related non-radiative recombination, assumed to be correlated to the presence of grain boundaries. Moreover PL excitation results demonstrate that an indirect excitation of Er³⁺ ions occurs for excitation wavelengths lower than 600 nm.