Effects of tantalum doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by a sol–gel method |
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| Authors: | MC Kao HZ Chen SL Young BN Chuang WW Jiang JS Song SS Jhan JL Chiang LT Wu |
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| Institution: | 1. Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung, Taiwan;2. Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu, Taiwan;3. Department of information Management, Ling Tung University, Taichung, Taiwan;4. Department of Electronic Engineering, Chung Chou University of Science and Technology, Changhua, Taiwan |
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| Abstract: | Tantalum-substituted Bi4Ti3O12 (Bi4Ti3-x/5Tax/5O12, BTTO) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by sol–gel technology. The effects of various processing parameters, including Ta content (x=0～0.08) and annealing temperature (500～800 °C), on the growth and properties of thin films were investigated. X-ray diffraction analysis shows that the BTTO thin films have a bismuth-layered perovskite structure with preferred (117) orientation. With the increase of Ta content, the grain size of film decreased slightly, and highly (117)-oriented BTTO films were obtained in the composition of x=0.06. Ta doping on the B-site of Bi4Ti3O12 could induce the distortion of oxygen octahedral and decrease the oxygen vacancy concentration by a compensating effect. The highly (117)-oriented BTTO thin films with x=0.06 exhibits the maximum remanent polarization (2Pr) of 50 μC/cm2 and a low coercive field (2Ec) of 104 kV/cm, fatigue free characteristics up to ≧ 108 switching cycles. |
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