High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures |
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Authors: | A Kakanakova-Georgieva D Nilsson E Janzén |
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Institution: | Department of Physics, Chemistry and Biology (IFM), Linköping University, SE 581 83, Linköping, Sweden |
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Abstract: | We report on a growth of AlN at reduced temperatures of 1100 °C and 1200 °C in a horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500–1600 °C and using a joint delivery of precursors. We present a simple route—as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply—for the AlN growth process on SiC substrates at the reduced temperature of 1200 °C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ~700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization. |
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