Luminescence and physical properties of copper doped CdO derived nanostructures |
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| Authors: | M Benhaliliba CE Benouis A Tiburcio-Silver F Yakuphanoglu A Avila-García A Tavira RR Trujillo Z Mouffak |
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| Institution: | 1. Physics Department, Sciences Faculty, Oran University of Sciences and Technology USTOMB, BP1505 Oran, Algeria;2. ITT-DIEE, Apdo, Postal 20, Metepec 3, 52176, Estado de Mexico, Mexico;3. Firat University, Physics Department, Faculty of Sciences and Arts, 23119, Elazig, Turkey;4. Cinvestav-IPN, Departamento de Ingeniería Eléctrica-SEES, Apdo. postal 14-740, 07000 México, D.F., Mexico;5. Centro de Investigación en Dispositivos Semiconductores—BUAP 14 Sur y Av. San Claudio, C.U. Puebla, Pue. México;6. Department of Electrical and Computer Engineering California State University, Fresno, CA, USA |
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| Abstract: | In this paper, we studied the photoluminescence (PL), the morphological, electrical and optical properties of pure and copper-doped cadmium oxide. CdO films were grown by a facile sol–gel spin coating process at 1200 rpm, and doped with copper at 2 and 3%. A (1 1 1)-oriented cubic structure with a lattice parameter of a=4.69 Å was confirmed by X-ray diffraction. Copper was shown to improve the optical transmittance in the short wavelength range of the visible spectrum. The optical band gap of CdO ranged between 2.49 and 2.62 eV as a result of Cu content. At room temperature, resistance fell drastically with Cu doping levels. AFM analysis of samples exhibited nano-mounts and nanowires. Finally, PL results showed a strong blue–violet emission peak at 2.80 eV. |
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