Transmission electron microscopy investigation of AlN growth on Si(111) |
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Authors: | D Litvinov D Gerthsen R Vöhringer DZ Hu DM Schaadt |
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Institution: | 1. Laboratory for Electron Microscopy and Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), D-76128 Karlsruhe, Germany;2. Institute for Applied Physics and CFN, KIT, D-76128 Karlsruhe, Germany |
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Abstract: | AlN layers with a thickness of 250 nm were grown by plasma-assisted gas source molecular-beam epitaxy on Si(111) at substrate temperatures between 600 °C and 900 °C. The surface morphology and microstructure of the AlN layers were analyzed by scanning and transmission electron microscopy. Different defect types are observed in the AlN layers and at the AlN/Si(111) interfaces as a function of the temperature: inclusions of pure Al in the Si-substrate, crystallites of the cubic AlN phase, dislocations, stacking faults and inversion domain boundaries. The formation and concentration of the defects depends strongly on the substrate temperature during the growth. X-ray diffraction rocking curves for the (0002) reflection yield minimum full width at half maximum values for the sample grown at the 900 °C under Al-rich conditions indicating optimum structural quality. However, the discussion of the entity of defects will show that a more differentiated view is required to assess the overall quality of the AlN layers. |
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